TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Effect of 3 nm gate length scaling in junctionless double

Effect of 3 nm gate length scaling in junctionless double

IG vs VGS curves with various metal gates for Si with and without

Effect of 3 nm gate length scaling in junctionless double

I On /I Off ratio comparison of this work with literature

I-V curves for Non-graded base SiGe HBT

Comparison between the current in a Ge quantum-well diode